Performance Analysis of Vertically Stacked Nanosheet Tunnel Field Effect Transistor with Ideal Subthreshold Swing

In this paper, a novel vertically stacked silicon Nanosheet Tunnel Field Effect Transistor (NS-TFET) device scaled to gate length of 12 nm with Contact poly pitch (CPP) 48 is simulated. NS-TFET investigated for its electrostatics characteristics using technology computer-aided design (TCAD) simulator. The inter-band tunneling mechanism P-I-N layout has been incorporated in the nanosheet devices. asymmetric technique doping used optimum results. provides low leakage current order10−16 A, an excellent subthreshold swing (SW) 23mv/decade, and negligible drain induced barrier lowering (DIBL) having value 10.5 mv/V. notable ON OFF ratio order 1011 achieved. exhibits high transconductance 3.022 × 10−5 S at source voltage 1 V. radiation effect alpha particle different energies on investigated. injection causes fluctuation short span result can serve as guideline designing robust circuit. shows tremendous improvement channel effects (SCE) good option advanced technologies.